Recent Advances in Photo-Epitaxy for Infrared Detector Fabrication
AbstractThe fabrication of infrared photon detectors from narrow band gap compositions of the CdxHg1-xTe (CMT) alloy has been a relatively small scale, high skill and high cost process. Compared with...
View ArticlePhotochemical MOVPE Growth of Compound Semi-Conductors
AbstractImplicit in the discussions was the aim of photochemical processing for deposition of semi-conductors, dielectrics and metals. The interests of the group ranged from technological applications...
View ArticleMechanisms in the Photochemical Growth of Cadmium Mercury Telluride
AbstractThe role of the various methods of growing cadmium mercury telluride (CMT) for use in the fabrication of infra-red detectors are briefly reviewed so as to identify the present status of...
View ArticleSingle Crystal Growth II: Epitaxial Growth
AbstractThis chapter is concerned with the growth of single-crystal epitaxial layers of semiconductors. The term “epitaxy” was originally used to describe the regular growth of one material on another...
View ArticleSingle Crystal Growth I: Melt Growth
AbstractThis chapter is concerned with growth of single crystals from melts of semiconductors. In the case of compound semiconductors, these melts are stoichiometric or nearly so. The production of...
View ArticleUse of anodic oxidation as a sectioning technique for diffusion measurements...
AbstractA radiotracer sectioning technique that can be used successfully for measuring concentration profiles in diffused slices of single-crystal CdTe using anodic oxidation is described. The...
View ArticleInteraction between iodine and CdTe in closed tube diffusions
AbstractThe compatibility of iodine and CdTe is discussed and methods by which CdTe can be doped with iodine from the vapour phase using closed tube diffusion techniques are described. At elevated...
View ArticleStudies on the diffusion of zinc and iodine into CdTe
AbstractStudies on the diffusion of iodine and zinc into CdTe are reported. Each iodine profile was divided up into four distinct regions and described mathematically by a function consisting of the...
View ArticleA comparison of the diffusion of iodine into CdTe, Hg 0.8 Cd 0.2 Te and Zn...
AbstractStudies on the diffusion of iodine into CdTe, mercury cadmium telluride (Hg0.8Cd0.2Te, referred to as MCT) and zinc cadmium telluride (Zn0.5Cd0.95Te, referred to as ZCT) in the temperature...
View ArticleMorphological effects and the diffusion of iodine in CdTe
AbstractThe morphology of undiffused and iodine-diffused CdTe slices and its effect on iodine concentration profiles is discussed. Such CdTe slices were analysed using defect etching, scanning electron...
View ArticleComparison of the diffusion of Hg into CdTe and Hg 0.8 Cd 0.2 Te
AbstractIn this paper, results published recently on Hg diffusion in the important infrared detector material, Hg0.8Cd0.2Te, and its common substrate material, CdTe, are compared and discussed. As is...
View ArticleSurface cracking in Zinc diffused CdTe
AbstractCdTe slices have been diffused in sealed silica capsules under conditions of saturated vapor pressure due to zinc in the temperature range 390–950°C. All slices annealed with zinc at...
View ArticleDiffusion of mercury into for Hg x Cd (1−x) Te 0≤x≤0.03
AbstractExperiments carried out to fabricate HgxCd(1-x)Te by diffusing mercury into CdTe slices from the vapour, resulted in obtaining slices with a maximum value of x=0.004. Measurements on the...
View ArticleCharacterization of CdTe, Cd0.96Zn0.04 and Zn-diffused CdTe by defect etching
AbstractThe crystal quality of CdTe, Cd0.96Zn0.04Te and Zn-diffused CdTe slices containing 1×1022 cm-3 atoms of zinc at the surface of the slice was investigated by the technique of defect etching. In...
View ArticleLaser Patterning of II-VI Epitaxial Thin Films
AbstractThe laser induced photo-MOVPE (photolytic-metal organic vapour phase epitaxy) technique has been used to grow epitaxial films onto CdTe or GaAs substrates (with a 257nm frequency doubled Argon...
View ArticleVapour Pressure Measurements on Organotellurium Precursors for Movpe
AbstractBefore an organometallic compound can be used as an MOVPE precursor, certain basic properties need to be known and one of the most important of these is vapour pressure. A technique for the...
View ArticleElectrical Characterisation of P-Type CdxHg1−xTe Grown by Movpe
AbstractThe results of electrical characterisation of a series of MOVPE layers of CdxHg1−xTe (CMT) grown by the interdiffused multilayer process (IMP) are reported. It is shown that the properties of...
View ArticleSurface Reaction Mechanisms in Selected Area Epitaxy of II-VIs
AbstractLaser-induced selected area epitaxy of CdTe thin films on GaAs substrates has been investigated and the role of vapour phase and surface reactions considered. Photo-enhanced growth rates of...
View ArticleAssessment of Organotellurium Compounds for Use as Movpe Precursors
AbstractIn order to reduce the growth temperature of (Hg,Cd)Te by MOVPE below 350–400°C, alternative organometallic precursors will be required which either decompose at a lower temperature than...
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