Laser Patterning of II-VI Epitaxial Thin Films
AbstractThe laser induced photo-MOVPE (photolytic-metal organic vapour phase epitaxy) technique has been used to grow epitaxial films onto CdTe or GaAs substrates (with a 257nm frequency doubled Argon...
View ArticleVapour Pressure Measurements on Organotellurium Precursors for Movpe
AbstractBefore an organometallic compound can be used as an MOVPE precursor, certain basic properties need to be known and one of the most important of these is vapour pressure. A technique for the...
View ArticleElectrical Characterisation of P-Type CdxHg1−xTe Grown by Movpe
AbstractThe results of electrical characterisation of a series of MOVPE layers of CdxHg1−xTe (CMT) grown by the interdiffused multilayer process (IMP) are reported. It is shown that the properties of...
View ArticleSurface Reaction Mechanisms in Selected Area Epitaxy of II-VIs
AbstractLaser-induced selected area epitaxy of CdTe thin films on GaAs substrates has been investigated and the role of vapour phase and surface reactions considered. Photo-enhanced growth rates of...
View ArticleAssessment of Organotellurium Compounds for Use as Movpe Precursors
AbstractIn order to reduce the growth temperature of (Hg,Cd)Te by MOVPE below 350–400°C, alternative organometallic precursors will be required which either decompose at a lower temperature than...
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